Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Reexamination Certificate
2000-04-04
2001-06-19
Carrillo, Sharidan (Department: 1746)
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
C134S019000, C134S022170, C134S025400, C134S026000, C134S029000, C134S030000, C134S034000, C134S035000, C134S036000, C134S042000, C134S902000, C510S175000, C510S435000, C216S099000, C216S102000
Reexamination Certificate
active
06248178
ABSTRACT:
CROSS-REFERENCE TO RELATED APPLICATION
This application claims the priority benefit of Taiwan application serial no. 89105908, filed Mar. 30, 2000.
BACKGROUND OF THE INVENTION
1. Field of Invention
The present invention relates to a method for removing pad nodules. More particularly, the present invention relates to a method for removing pad nodules utilizing deionized water and developer.
2. Description of Related Art
Pads which are made of aluminium or aluminium/copper alloy are formed on a wafer for bonding and testing. An etching process such as plasma etching is performed for forming the pads. If chloride plasma is utilized in the etching process, a corrosion effect is generated. To avoid the corrosion effect, fluorine plasma is utilized. However, fluorine easily remains on the pads after the plasma process and then pad nodules (as shown in
FIG. 1
) are formed on the pads because fluorine remains on the pads reacts with the pads to produce AlF
3
. The pad nodules affect the reliability of the subsequently formed devices.
A wet rinse process is usually performed after the plasma etching process to remove fluorine remains on the pads. But fluorine is difficult to be completely removed, although the wet rinse process is performed. Therefore, an oxygen plasma process may be performed to help removal of fluorine, but the oxygen plasma process also affects the reliability of the subsequently formed devices.
SUMMARY OF THE INVENTION
The invention provides a method for removing pad nodules, which method effectively removes the pad nodules by utilizing deionized water and developer.
The invention provides a method for removing pad nodules that the method is simply implemented and suitable for the conventional facilities.
The invention provides a method for removing fluorine remains on pads. In accordance with the method, fluorine remains on pads is effectively removed; thus, generation of pad nodules is avoided.
As embodied and broadly described herein, the invention provides a method for removing pad nodules. A wafer having pads formed with pad nodules is dipped into deionized water. Then, the wafer is spin-dried. An alkaloid developer is coated on the wafer; next, the developer is removed. The wafer is baked.
The present invention provides a method for removing fluorine remains on pads. A wafer having pads is dipped into deionized water, and then the wafer is spin-dried. An alkaloid developer is coated on the wafer; next, the developer is removed. The wafer is baked.
The method disclosed in this invention effectively removes pad nodules. Moreover, the method is simply implemented and suitable for the conventional facilities. In addition, generation of pad nodules is avoided by utilizing this method to remove fluorine remains on pads after the etching process.
It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
REFERENCES:
patent: 5824234 (1998-10-01), Jou et al.
patent: 5904156 (1999-05-01), Advocate, Jr. et al.
patent: 5980643 (1999-11-01), Jolley
patent: 5989353 (1999-11-01), Skee et al.
Chung Lien-Sheng
Kung Cheng-Chih
Li Tai-Yuan
Tsai Cheng-Tzung
Carrillo Sharidan
Thomas Kayden Horstemeyer & Risley
United Microelectronics Corp.
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