Method for removing metal surface contaminants from silicon

Details Method for removing metal surface contaminants from silicon Method for removing metal surface contaminants from silicon

1996-05-02

1998-12-22

McCamish, Marion E.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 2, 134 26, 134 28, 134 30, 436177, B08B 704

Patent

active

058513035

ABSTRACT:
A method for removing metal surface contaminants from silicon metalloid. The method comprises sequentially contacting the silicon with gaseous hydrogen fluoride and then with an aqueous solution comprising at least one-half weight percent hydrogen peroxide. The method is especially useful as a means for recovering metal surface contaminants on semiconductor grade silicon for analysis of surface contamination of the silicon by such metals. The method is useful for recovering copper from the surface of semiconductor grade silicon in an aqueous solution which can be analyzed directly to determine the amount of copper contamination of the surface of the silicon.

REFERENCES:
patent: 4264374 (1981-04-01), Beyer et al.
patent: 4990459 (1991-02-01), Maeda et al.
"Atomic Absorption Spectrochemical Analysis", B.V. L'Vov, (Adam Hilger, London) pp. 122-125 1970.
"The Wafer-surface Impurity Analysis Paradox", by Bruce E. Deal, Semiconductor International, Oct. 1990,pp. 56-57. (see Burggraaf reference submitted by applicant)
Park et al., J. Electrocehm. Soc., vol. 142 (No. 2), pp. 571-576.
Iscoff (Editor) , Semiconductor International, Jul. 1993, pp. 58-63.
Burggraaf (Editor) , Semiconductor International, Oct. 1990, pp. 52-58.

Affiliated with

Also associated with

Rating

Method for removing metal surface contaminants from silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for removing metal surface contaminants from silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing metal surface contaminants from silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2041973