Method for removing etching residue using a hydroxylamine-contai

Details Method for removing etching residue using a hydroxylamine-contai Method for removing etching residue using a hydroxylamine-contai

1994-07-14

1996-01-09

Silbaugh, Jan H.

Cleaning and liquid contact with solids

Processes

Miscellaneous

252548, 252DIG11, B08B 308, C11D 330, C11D 333

Patent

active

054825660

ABSTRACT:
A method for removing resists and etching residue from substrates using a stripping and cleaning composition containing hydroxylamine and at least one alkanolamine is described. Further, a method for removing etching residue from semiconductor substrates using a cleaning composition containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition of the method.

REFERENCES:
patent: 4067690 (1978-01-01), Cuisia et al.
patent: 4111767 (1978-09-01), Kawagishi et al.
patent: 4268406 (1981-05-01), O'Brien et al.
patent: 4350606 (1982-09-01), Cuisia et al.
patent: 4425380 (1984-01-01), Nuzzi et al.
patent: 5234506 (1993-08-01), Winston et al.
patent: 5296041 (1994-03-01), Vinci et al.

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