Method for removing etch residue material

Details Method for removing etch residue material Method for removing etch residue material

1997-06-24

1999-02-23

Warden, Jill

Cleaning and liquid contact with solids

Processes

Including work heating or contact with combustion products

134 12, 134 13, 134 2, 134 7, 134 31, 134 38, 1566461, B08B 500

Patent

active

058739483

ABSTRACT:
A method for removing etch residue material in which the removing process is simple, and the metal is prevented from being corroded or damaged. The method for removing etch residue materials and photoresist after carrying out a dry etching includes the steps of preparing a dry chemical by using one or more gas compounds, and removing the etch residue materials by raising the dry chemical above a critical point, wherein the dry chemical comprises carbon dioxide gas and one or more gases selected from a group consisting of DMSO (dimethyl sulfoxide), DMFA (dimethyl formamide), and THF (phentydrone).

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