Method for removing defects from chromium and chromium oxide pho

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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134 28, 156635, 156656, 219121LM, C23G 102

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active

041054687

ABSTRACT:
Removal of selected, isolated defects comprised of excess chromium (Cr) or chromium oxide (Cr.sub.2 O.sub.3) from photomasks comprises contacting at least the defect area by a suitable acid and initiating the etch of the defect area by contacting the defect area with a metal probe made from a suitable material. Excess chromium or chromium oxide areas may be isolated by using a laser to separate the areas from areas which are to remain.

REFERENCES:
patent: 3539408 (1970-11-01), Cashau et al.
patent: 3673018 (1972-10-01), Dingwall
patent: 3947801 (1976-03-01), Bube

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