Method for removing copper contaminant from semiconductor surfac

Details Method for removing copper contaminant from semiconductor surfac Method for removing copper contaminant from semiconductor surfac

1974-09-13

1976-04-20

Esposito, Michael F.

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

134 2, 134 42, 427 82, 427309, 427444, 252 791, 252 795, B44D 512, H01L 700

Patent

active

039517101

ABSTRACT:
Copper contaminants are removed from silicon with a solution containing copper (II) complexes. The solution may be recycled after use by bubbling oxygen through it.

REFERENCES:
patent: 2647830 (1953-08-01), Allen et al.
patent: 2961354 (1960-11-01), Cleveland
patent: 3413160 (1968-11-01), Teumac
patent: 3436259 (1969-04-01), Regh
patent: 3447965 (1969-06-01), Teumac
patent: 3549433 (1970-12-01), Renner
patent: 3600244 (1971-08-01), Wegener
Chem. Abstracts, Vol. 79, (Aug. 1973), p. 311, No. 47100d, Copper Ammonia Complex Etching Solution. . . Alloys.
Copper Ammonia Complex Etching Solution...Alloys."

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