Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2003-02-03
2008-10-28
Menz, Douglas M. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S745000, C438S751000, C216S002000
Reexamination Certificate
active
07442652
ABSTRACT:
A method for removing contamination on a semiconductor substrate is disclosed. The contamination contains at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements. The method comprises first and second process steps. The first process is wet processing the semiconductor substrate by first remover liquid that contains one of acid and alkali. The second process is wet processing the semiconductor substrate by second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.
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Aoki Hidemitsu
Watanabe Kaori
Menz Douglas M.
Muirhead and Saturnelli LLC
NEC Electronics Corporation
Such Matthew W
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