Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1999-01-15
2000-12-19
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438714, 438795, 134 13, 134 12, 216 67, 216 69, H01L 21302, H01L 21461
Patent
active
06162733&
ABSTRACT:
A method for removing contaminants from integrated circuit devices. Particularly disclosed is a method for removing alkali metal and halogen-based contaminants from an integrated circuit device as the device is being fabricated.
REFERENCES:
patent: 5380401 (1995-01-01), Jones et al.
patent: 5858878 (1999-01-01), Toda
Bowers Charles
Lee Hsien-Ming
Lucent Technologies - Inc.
LandOfFree
Method for removing contaminants from integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for removing contaminants from integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing contaminants from integrated circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-270915