Method for removing a passivation layer prior to depositing...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S629000, C257SE21579, C257SE21585

Reexamination Certificate

active

07820536

ABSTRACT:
By forming a thin passivation layer after the formation of openings connecting to a highly reactive metal region, any queue time effects may be significantly reduced. Prior to the deposition of a barrier/adhesion layer, the passivation layer may be efficiently removed on the basis of a heat treatment so as to initiate material removal by evaporation.

REFERENCES:
patent: 5736002 (1998-04-01), Allen et al.
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 6706629 (2004-03-01), Lin et al.
patent: 6812133 (2004-11-01), Takeuchi
patent: 6838370 (2005-01-01), Niuya et al.
patent: 6951809 (2005-10-01), Tarumi et al.
patent: 2003/0008509 (2003-01-01), Kofuji et al.
patent: 2003/0186544 (2003-10-01), Matsui et al.
patent: 2007/0049007 (2007-03-01), Yang et al.
patent: 1345270 (2002-10-01), None
patent: WO 00/02238 (2000-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for removing a passivation layer prior to depositing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for removing a passivation layer prior to depositing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing a passivation layer prior to depositing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4159711

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.