Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2006-08-31
2010-10-26
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
C438S629000, C257SE21579, C257SE21585
Reexamination Certificate
active
07820536
ABSTRACT:
By forming a thin passivation layer after the formation of openings connecting to a highly reactive metal region, any queue time effects may be significantly reduced. Prior to the deposition of a barrier/adhesion layer, the passivation layer may be efficiently removed on the basis of a heat treatment so as to initiate material removal by evaporation.
REFERENCES:
patent: 5736002 (1998-04-01), Allen et al.
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 6706629 (2004-03-01), Lin et al.
patent: 6812133 (2004-11-01), Takeuchi
patent: 6838370 (2005-01-01), Niuya et al.
patent: 6951809 (2005-10-01), Tarumi et al.
patent: 2003/0008509 (2003-01-01), Kofuji et al.
patent: 2003/0186544 (2003-10-01), Matsui et al.
patent: 2007/0049007 (2007-03-01), Yang et al.
patent: 1345270 (2002-10-01), None
patent: WO 00/02238 (2000-01-01), None
Koschinsky Frank
Letz Tobias
Schuehrer Holger
Advanced Micro Devices , Inc.
Nguyen Khiem D
Williams Morgan & Amerson
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