Method for removing a diffusion barrier layer on pad regions

Details Method for removing a diffusion barrier layer on pad regions Method for removing a diffusion barrier layer on pad regions

1996-05-23

1998-05-26

Kight, John

Semiconductor device manufacturing: process

Making point contact device

438663, H05K 100, H05K 103

Patent

active

057563764

ABSTRACT:
A method for removing a diffusion barrier layer on pad regions and diminishing the effect of plasma ions induced when removing a photoresist layer by a plasma asher. A two stage rapid thermal processing step is applied to the partially-removed diffusion barrier layer before a metal layer is formed. The first stage lasts a longer period of time at a lower temperature, for example, in the range of between 50 and 60 seconds at a temperature of about 600.degree. C. The second stage lasts a shorter period of time at a higher temperature, for example, in the range of between 20 and 30 seconds at a temperature of about 750.degree. C.

REFERENCES:
patent: 4307132 (1981-12-01), Chu et al.
patent: 4702967 (1987-10-01), Black et al.
patent: 4753851 (1988-06-01), Roberts et al.

Affiliated with

Also associated with

Rating

Method for removing a diffusion barrier layer on pad regions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for removing a diffusion barrier layer on pad regions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing a diffusion barrier layer on pad regions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1959357