Method for removal of pattern resist over patterned metal...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S706000, C438S710000, C134S001100, C134S001200

Reexamination Certificate

active

07354865

ABSTRACT:
A method of removing the pattern resist that remains on a microchip wafer after etching a patterned layer that is supported by a spacer layer. After the etch, the wafer is cleaned with a develop clean process that removes polymer residues from the pattern resist surface. Next is an ash to remove the hardened pattern resist surface, followed by removal of the pattern resist.

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patent: 2004/0053505 (2004-03-01), Chinn et al.
patent: 2004/0063595 (2004-04-01), Park et al.

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