Method for removal of impurities in cyclic siloxanes useful...

Distillation: processes – separatory – With disparate physical separation – Utilizing solid sorbent

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C203S014000, C210S664000, C528S010000, C556S466000

Reexamination Certificate

active

07108771

ABSTRACT:
A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.

REFERENCES:
patent: 4087448 (1978-05-01), Rossmy et al.
patent: 4127598 (1978-11-01), McEntee
patent: 4156689 (1979-05-01), Ashby et al.
patent: 4374110 (1983-02-01), Darnell et al.
patent: 4670299 (1987-06-01), Fukuyama et al.
patent: 4745169 (1988-05-01), Sugiyama et al.
patent: 4755370 (1988-07-01), Kray et al.
patent: 4764631 (1988-08-01), Halm et al.
patent: 4871616 (1989-10-01), Kimura et al.
patent: 5043789 (1991-08-01), Linde et al.
patent: 5047492 (1991-09-01), Weidner et al.
patent: 5098865 (1992-03-01), Machado et al.
patent: 5204134 (1993-04-01), Girsh
patent: 5210250 (1993-05-01), Watanuki et al.
patent: 5276173 (1994-01-01), Marko et al.
patent: 5312947 (1994-05-01), Tsukuno et al.
patent: 5484867 (1996-01-01), Lichtenhan et al.
patent: 5536323 (1996-07-01), Kirlin et al.
patent: 5711816 (1998-01-01), Kirlin et al.
patent: 5804040 (1998-09-01), Asai et al.
patent: 5879649 (1999-03-01), Henderson et al.
patent: 6114500 (2000-09-01), Mori et al.
patent: 6171945 (2001-01-01), Mandal et al.
patent: 6368359 (2002-04-01), Perry et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6410463 (2002-06-01), Matsuki
patent: 6858697 (2005-02-01), Mayorga et al.
patent: 2004/0054114 (2004-03-01), Mayorga et al.
patent: 0543665 (1993-05-01), None
patent: 50-111198 (1974-01-01), None
Alfred Grill, et al., Novel Low-k Dual-Phase Materials Prepared by PECVD, Mat. Res. Soc. Symp. Proc. vol. 612, 2000 Materials Research Society.
Albert Wang, et al. “TMCTS for Gate Dielectric in Thin Film Transistors”, Mat. Res. Soc. Meeting 1996.
A. Grill, et al., “Ultralow-k Dielectrics Prepared by Plasma-enhanced Chemical Vapor Deposition”, Applied Physics Letters, vol. 79, No. 6, Aug. 6, 2001.
Mantz, et al., “Thermolysis of Polyhedral Oligomeric Silsesquioxane (POSS) Macromers and POSS-Siloxane Copolymers”, Chem. Mater., 1996, 8, p. 1250-1259.
Ravi K. Laxman, Neil Hendrix Barry Arkles, Terry A. Tabler “Synthesizing Low-K CVD Materials for Fab Use” Semiconductor International, Nov. 1, 2000.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for removal of impurities in cyclic siloxanes useful... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for removal of impurities in cyclic siloxanes useful..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removal of impurities in cyclic siloxanes useful... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3558323

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.