Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-08-02
2005-08-02
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S723000, C438S728000, C438S777000
Reexamination Certificate
active
06924239
ABSTRACT:
The present invention is generally directed towards a method for removing hydrocarbon contamination from a substrate prior to a nitridation step, therein providing for a generally uniform nitridation of the substrate. The method comprises placing the substrate in a process chamber and flowing an oxygen-source gas into the process chamber. A first plasma is formed in the process chamber for a first predetermined amount of time, wherein the hydrocarbons combine with one or more species of the oxygen-source gas in radical form to form product gases. The gases are removed from the process chamber and a nitrogen-source gas is flowed into the process chamber. A second plasma is then formed in the process chamber for a second predetermined amount of time, therein nitriding the substrate in a significantly uniform manner.
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Alshareef Husam N.
Niimi Hiroaki
Varghese Ajith
Brady III Wade James
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thomas Toniae M.
Tung Yingsheng
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