Method for relieving stress in GaN devices

Details Method for relieving stress in GaN devices Method for relieving stress in GaN devices

1998-09-14

2000-09-05

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

117 43, 117 45, 117 84, 117 89, 117 95, 117952, C30B 2510

Patent

active

061136859

ABSTRACT:
An improved method for growing a first layer on a second layer in which the first and second layers have different thermal indices of expansion and/or a mismatch of the lattice constants and the deposition being carried out at a temperature above ambient. The first layer includes a material that decomposes upon beating above a decomposition temperature. One of the first and second layers absorbs light in a first frequency range and the other of the first and second layers is transparent to the light in the first frequency range. In the method of the present invention, the one of the first and second layers that absorbs light in the first frequency range is exposed to light in the first frequency range by passing the light through the other of the first and second layers. This exposure heats the first layer to a temperature above the decomposition temperature at the interface of the first and second layers after the first layer has been deposited on the second layer. The decomposition can also mean to physically remove the material by means such as chemical etching. The present invention is well suited to the deposition of III-V semiconducting materials on substrates such as sapphire.

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Wong et al. "Damage free seporation of GaN thin films from Supphire substates, " Applied Physics Letter, vol. 72(5) pp. 599-601.

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