Method for reflow of phosphosilicate glass

Coating processes – Electrical product produced – Welding electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

65102, 65104, 427 85, 427 93, 4273981, 427444, H01L 21268, H01L 21324

Patent

active

044748310

ABSTRACT:
In a method for reflow of a phosphosilicate glass (PSG) layer applied to a semiconductor wafer, the wafer is placed in a processing chamber in parallel alignment with a planar blackbody source. The chamber is evacuated, and the source rapidly and uniformly heats the PSG layer to a temperature at which plastic flow occurs. The blackbody source provides significant radiation in the 7-10 micron portion of the infrared spectrum. The thermal treatment is typically completed in 8-15 seconds, thereby avoiding impurity redistribution in the semiconductor device.

REFERENCES:
patent: 3901183 (1975-08-01), Wittkower
patent: 3954191 (1976-05-01), Wittkower et al.
patent: 4417347 (1983-11-01), Muka
patent: 4417914 (1983-11-01), Lehrer
patent: 4420503 (1983-12-01), Leang
Armstrong et al., "A Scanning Electron Microscope Investigation of Glass Flow in MOS Integrated Circuit Fabrication," J. Electrochem. Soc.: Sol. State Sci. and Technol., vol. 121, No. 2, Feb. 1974, p. 307.
Razouk et al., "Pressure Induced Phosphosilicate Glass Flow," J. Electrochem. Soc.: Extended Abstracts, vol. 82-1, May 1982, p. 138.
Jeuch et al., "P-Glass Reflow with a Tunable CO.sub.2 Laser," Poster Paper, Materials Res. Soc. Conf., Boston, Nov. 16-20, 1981.
Delfino et al., "Laser Activated Flow of Phosphosilicate Glass," J. Electrochem. Soc.: Extended Abstracts, vol. 82-1, May 1982, p. 143.
Pending Application Ser. No. 262,838, filed May 12, 1981, Muka and Russo.
Kern et al., "Improved Reliability of Electron Devices Through Optimized Coverage of Surface Topography," Eleventh Annual Proc. Reliability Physics, p. 214 (1973).
Delfino et al., "Laser Activated Flow of Phosphosilicate Glass in Integrated Circuit Devices," IEEE Electron Device Letters, vol. EDL-3, No. 5, May 1982, p. 116.
Hashimoto et al., "Glass Flow Mechanism of Phosphosilicate Glass and Its Application in MOS Devices," Jap. J. Appl. Phys., vol. 16, Supp. 16-1, p. 73 (1977).
Naumaan et al., "Phosphosilicate Glass Flow for Integrated Optics," J. Vac. Sci. Technol., vol. 17(1), Jan./Feb. 1980, p. 529.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for reflow of phosphosilicate glass does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for reflow of phosphosilicate glass, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reflow of phosphosilicate glass will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-526804

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.