Method for reducing word line current in magnetoresistive...

Details Method for reducing word line current in magnetoresistive... Method for reducing word line current in magnetoresistive...

2006-10-06

2008-09-09

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000

Reexamination Certificate

active

07423328

ABSTRACT:
The method for reducing word line currents in magnetoresistive random access memory (MRAM) includes disposing the MRAM bit between a pair of word lines according to a magnetic field strength is increased when a distance between a magnetic section and its corresponding word line is decreased.

REFERENCES:
patent: 6147922 (2000-11-01), Hurst et al.
patent: 6714441 (2004-03-01), Fulkerson et al.
patent: 7132707 (2006-11-01), Min et al.
patent: 2006/0120147 (2006-06-01), Peng et al.

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