Method for reducing the thickness of substrates

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

Reexamination Certificate

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C438S690000, C438S977000, C257SE21304, C257SE21305

Reexamination Certificate

active

07977211

ABSTRACT:
The current invention presents a method for thinning wafers. The method uses a two-step process, whereby first the carrier wafer (2) is thinned and in a second step the device wafer (1) is thinned. The method is based on imprinting the combined thickness non-uniformities of carrier (2) and glue layer (3) essentially on the carrier (2), with a resulting low TTV of the wafer (100) after thinning.

REFERENCES:
patent: 6180527 (2001-01-01), Farnworth et al.
patent: 7393790 (2008-07-01), Britt et al.
patent: 7763543 (2010-07-01), Nagaya et al.
patent: 2006/0046433 (2006-03-01), Sterrett et al.
patent: 0337556 (1989-10-01), None
patent: 9117859 (1997-05-01), None
patent: WO 98/09804 (1998-03-01), None

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