Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2011-07-12
2011-07-12
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S690000, C438S977000, C257SE21304, C257SE21305
Reexamination Certificate
active
07977211
ABSTRACT:
The current invention presents a method for thinning wafers. The method uses a two-step process, whereby first the carrier wafer (2) is thinned and in a second step the device wafer (1) is thinned. The method is based on imprinting the combined thickness non-uniformities of carrier (2) and glue layer (3) essentially on the carrier (2), with a resulting low TTV of the wafer (100) after thinning.
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patent: 0337556 (1989-10-01), None
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Everhart Caridad M
IMEC
Katholieke Universiteit Leuven
Knobbe Martens Olson & Bear LLP
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