Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Reexamination Certificate
2005-06-28
2005-06-28
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
C117S003000, C117S953000, C117S954000, C117S955000, C117S956000
Reexamination Certificate
active
06911079
ABSTRACT:
The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes are prepared.
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Hon Schang-Jing
O'Connor Kevin
Rice Peter
Wang Alexander
Hamilton Brook Smith & Reynolds P.C.
Kopin Corporation
Kunemund Robert
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