Method for reducing the fogging effect

Details Method for reducing the fogging effect Method for reducing the fogging effect

2005-06-23

2008-10-14

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S296000, C430S942000

Reexamination Certificate

active

07435517

ABSTRACT:
A method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which conforms to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimized set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.

REFERENCES:
patent: 11204415 (1999-07-01), None
Cui, Zheng, et al., “Proximity Correction of Chemically Amplified Resists for Electron Beam Lithography,” Microelectronic Engineering 41/42 (1998) pp. 183-186.
Simecek, Michal, et al., “A New Approach of E-beam Proximity Effect Correction for High-Resolution Applications,” JPN. J. Appl. Phys., vol. 37 (1998) pp. 6774-6778.
Park, D., et al., “Modeling and Correction of Global CD Uniformity Caused by Fogging and Loading Effects in 90nm Node CAR Processes,” Proc. of SPIE, vol. 5130 (2003) pp. 78-85.
Yang, Seung-Hune, et al. , “Proximity Effect Correction Optimization Considering Fogging and Loading Effects Compensation,” Proc. of SPIE, vol. 4689 (2002), pp. 977-984.
Yang, Seung-Hune, et. al., “Fogging Effect Consideration in Mask Process at 50KeV E-Beam Systems,” Proc. of SPIE, vol. 4889 (2002), pp. 786-791.
Park, Eui Sang, et al., “Optimum PEC Conditions Under Resist Heating Effect Reduction for 90nm Node Mask Writing,” Proc. SPIE, vol. 4889, Part Two, pp. 792-799, 2005.
Stevens, L., et al., “Determination of the Proximity Parameters in Electron Beam Lithography Using Doughnut-Structures,” Microelectronics Engineering 5 (1986) pp. 141-150.
Rishton, S.A., et al., “Point exposure distribution measurements for proximity correction in electron beam lithography on a sub-100nm scale,” Journal of Vacuum Science & Technology B (Microelectronics Processing and Phenomena) USA, vol. 5, No. 1, pp. 135-141, 2005.
Misaka, Akio, et al., “Determination of Proximity Effect Parameters in Electron-Beam Lithography,” J. Appl. Physics, vol. 68, No. 12, Dec. 15, 1990, pp. 6472-6479.

Affiliated with

Also associated with

Rating

Method for reducing the fogging effect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for reducing the fogging effect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing the fogging effect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4008056