Method for reducing temperature variations across a semiconducto

Metal treatment – Compositions – Heat treating

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29576T, 29576B, 148187, H01L 21265

Patent

active

045604207

ABSTRACT:
Temperature variations across the surface of a semiconductor wafer (12), having at least one major surface thereof exposed to a source of radiant heat energy (18), are reduced by positioning a reflective ring (30, 30', 30" or 30'") proximate the wafer edge (28). The reflective ring (30, 30', 30" or 30'") reflects the heat energy towards the wafer periphery (27) to provide substantially uniform heat across the wafer.

REFERENCES:
patent: 2057421 (1936-10-01), Dickson
patent: 4001047 (1977-01-01), Boah
patent: 4041278 (1977-08-01), Boah
patent: 4081313 (1978-03-01), McNeilly et al.
patent: 4097226 (1978-06-01), Erikson et al.
patent: 4101759 (1978-07-01), Anthony et al.
patent: 4113547 (1978-09-01), Katz
patent: 4331485 (1982-05-01), Gat
patent: 4468259 (1984-08-01), Mimura
patent: 4468260 (1984-08-01), Hiramoto
patent: 4469529 (1984-09-01), Mimura
patent: 4482395 (1984-11-01), Hiramoto

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