Coating processes – Electrical product produced – Condenser or capacitor
Patent
1977-05-11
1979-10-09
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
148 63, 148 15, 357 52, 427 38, 427 85, 427 87, B05D 512
Patent
active
041706668
ABSTRACT:
III-V compound semiconductors having native dielectrics thereon which are thermally grown from special composition surface layers thereof are provided with reduced surface recombination velocities by proper selection of the surface layer's composition and extent of conversion to the dielectric.
REFERENCES:
phillips et al., "Fabrication of GaAsP MIS Capacitors using a Thermal-Oxidation Dielectric Growth Process", J Electrochem. Soc, Aug. 1973.
Schwartz et al., "The Influence of Native Oxides on the Degradation and Passivation of GaAs Junction Layers", 1972 Symp. on GaAs (1972).
Kuhlmann et al., "The Effects of Ionizing Arsenide on Gallium Arsenide Phosphide MIS Structures", Univ. of New Mexico, Aug. 1973.
Coerver et al., "Thermal Oxidation of Gallium Aresnide Phosphide", Doctoral Thesis, Univ. of New Mexico, Aug. 1973.
Phillips et al., "Gallium-Arsenide-Phosphide MIS Capacitor Frabrication", Doctoral Thesis, Univ. of New Mexico, May 1972.
Kuhlmann Gordon J.
Pancholy Ranjeet K.
Phillips D. Howard
Hamann H. Fredrick
Rockwell International Corporation
Smith John D.
Weber Jr. G. Donald
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