Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2007-09-11
2007-09-11
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
C438S238000, C438S251000, C438S505000, C257SE21008, C257S561000, C257S632000, C257S646000, C257S661000
Reexamination Certificate
active
10936275
ABSTRACT:
In one embodiment, a method of fabricating a transistor for a memory cell includes the steps of performing a counter doping implant before or after a source/drain implant. The counter doping implant may comprise one or more implant steps that move a metallurgical junction formed by a well and a highly doped region closer to a surface of the substrate. The counter doping implant may also increase the concentration of the dopant of the well. The counter doping implant and the source/drain implant may be performed using the same mask. Transistors fabricated using embodiments of the present invention may be employed in memory cells to reduce soft error rates.
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Pohland Oliver
Xu Yanzhong
Cypress Semiconductor Corporation
Nhu David
Okamoto & Benedicto LLP
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