Method for reducing resistance for programmed antifuse

Details Method for reducing resistance for programmed antifuse Method for reducing resistance for programmed antifuse

1990-10-23

1992-03-10

Wojciechowicz, Edward J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 236, 357 51, 365100, H01L 2910, G11C 1700

Patent

active

050953621

ABSTRACT:
A Read-Only Memory is comprised of a plurality of memory cells. An antifuse film is disposed between and in contact with an underlying heavily N-doped word line layer and an overlying metallic address line layer. The word line is disposed on an insulating semiconductor substrate and is in contact with a surrounding oxide layer. The programmable material is irreversibly configured between the two resistivity states by application of a threshold voltage. The threshold voltage alters the electrical state of the programmable material only in the proximity of that portion of the programmable material to which the threshold voltage has been applied. The resistivity of the low resistivity state is selectively decreased by implanting nonactivated conductive dopants into film. These dopants are characterized by having a nonactivated state where the conduction of carriers in the film is not enhanced, and an activated state where the conduction of carriers in the film is enhanced. The dopants are configured from the nonactivated state into the activated state by application of the same threshold voltage that is applied across the antifuse film to program the material.

REFERENCES:
patent: 4442507 (1984-04-01), Roesner

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