Method for reducing resistance at interface of single crystal si

Details Method for reducing resistance at interface of single crystal si Method for reducing resistance at interface of single crystal si

1993-06-23

1995-01-10

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437946, 437228, 156643, 134 1, H01L 21203

Patent

active

053806778

ABSTRACT:
An interface having low resistance is formed between a single crystal silicon surface and deposited silicon. Before deposition of the silicon, the oxide or nitride layer covering the surface is removed in conventional fashion. The exposed surface is then pre-treated with a plasma etch containing SF.sub.6. Because fluorine is more electro-negative than oxygen, fluorine atoms adhere to the exposed single crystal silicon surface, where their presence prevents reoxidation. Silicon is then deposited on the surface by thermal decomposition of silane, during which deposition the fluorine atoms form silicon-tetrafluoride, which gas is evacuated during a normal out-gas cycle. The resultant interface, which may be an emitter-base junction, exhibits an effective resistance of only a few ohms.

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patent: 4985372 (1991-01-01), Narita
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patent: 5120394 (1992-06-01), Mukai
patent: 5122482 (1992-06-01), Hayashi et al.
patent: 5238849 (1993-08-01), Sato

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