Method for reducing resist poisoning during patterning of...

Details Method for reducing resist poisoning during patterning of... Method for reducing resist poisoning during patterning of...

2007-05-01

2009-06-23

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S231000, C438S682000, C257SE21249, C257SE21438

Reexamination Certificate

active

07550396

ABSTRACT:
By performing a plasma treatment for efficiently sealing the surface of a stressed dielectric layer containing silicon nitride, an enhanced performance during the patterning of contact openings may be achieved, since nitrogen-induced resist poisoning may be significantly reduced during the selective patterning of stressed layers of different types of intrinsic stress.

REFERENCES:
patent: 6620560 (2003-09-01), Jiang et al.
patent: 2004/0062867 (2004-04-01), Friedmann et al.
patent: 2005/0269650 (2005-12-01), Pidin
patent: 2007/0249113 (2007-10-01), Grudowski et al.
patent: 2007/0287240 (2007-12-01), Chen et al.
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2006 046 374.9-33 dated Jul. 24, 2007.

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