Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-01-27
1998-07-21
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438760, 438783, 216 67, 216 74, H01L 2100
Patent
active
057834938
ABSTRACT:
The present invention provides a method of manufacturing an interlevel dielectric layer (ILD) which has reduced precipitates after an etch back of the borophosphosilicate glass (BPSG) ILD layer. A dielectric layer containing boron and phosphorous is deposited on the substrate. A reflow process is performed on the dielectric layer at a temperature in a range of between about 800.degree. and 950.degree. C. The dielectric layer is etched back using a reactive ion etch. In an important step, a surface treatment is performed on the dielectric layer thorough a plasma treatment. A plasma source gas for the surface treatment is of a gas selected from the group consisting of Ar, NO.sub.2, N.sub.2, and O.sub.2, at a temperature in a range of between about 250.degree. and 400.degree. C. at a pressure in a range of between about 1 mtorr and 5 torr, at a RF power in a range of between about 300 and 400 watts, and for a time in a range of between about 15 and 80 seconds.
REFERENCES:
patent: 5000818 (1991-03-01), Thomas et al.
patent: 5314848 (1994-05-01), Yasui et al.
patent: 5405489 (1995-04-01), Kim et al.
patent: 5512514 (1996-04-01), Lee
patent: 5656556 (1997-08-01), Yang
patent: 5679591 (1997-10-01), Lin et al.
Chang Chao-Hsin
Chang Hsien-Wen
Yeh Rann Shyan
Ackerman Stephen B.
Alejandro Luz
Breneman R. Bruce
Saile George O.
Stoffel William J.
LandOfFree
Method for reducing precipitate defects using a plasma treatment does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for reducing precipitate defects using a plasma treatment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing precipitate defects using a plasma treatment will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1646759