Fishing – trapping – and vermin destroying
Patent
1991-04-12
1992-10-20
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437126, 437131, 437132, 437133, H01L 2120
Patent
active
051569957
ABSTRACT:
The present invention and process relates to crystal lattice mismatched semiconductor composite having a first semiconductor layer and a second semiconductor growth layer deposited thereon to form an interface wherein the growth layer can be deposited at thicknesses in excess of the critical thickness, even up to about 10.times. critical thickness. Such composite has an interface which is substantially free of interface defects. For example, the size of the growth areas in a mismatched In.sub.0.05 Ga.sub.0.95 As/(001)GaAs interface was controlled by fabricating 2-.mu.m high pillars of various lateral geometries and lateral dimensions before the epitaxial deposition of 3500.ANG. of In.sub.0.05 Ga.sub.0.95 As. The linear dislocation density at the interface was reduced from >5000 dislocations/cm to about zero for 25-.mu.m lateral dimensions and to less than 800 dislocations/cm for lateral dimensions as large as 100 .mu.m. The fabricated pillars control the lateral dimensions of the growth layer and block the glide of misfit dislocations with the resultant decrease in dislocation density.
REFERENCES:
patent: 3788890 (1974-01-01), Mader et al.
patent: 3976512 (1976-08-01), De Nora et al.
Ast Dieter G.
Fitzgerald, Jr. Eugene A.
Chaudhuri Olik
Cornell Research Foundation Inc.
Fleck Linda J.
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