Method for reducing metal contamination of silicon wafers during

Details Method for reducing metal contamination of silicon wafers during Method for reducing metal contamination of silicon wafers during

1997-03-27

1998-12-29

Warden, Jill

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 1, 134 12, 134 13, 134 3, 252102, B08B 304, C23F 124, C23G 102

Patent

active

058534911

ABSTRACT:
A complex building agent, such as EDTA is added in a predetermined concentration to the "SC 1" step of a "PIRANHA-RCA" cleaning sequence for reducing the metal contamination left on the surface of a silicon wafer after completion of this cleaning step.

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Meuris, et. al. The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH.sub.4 OH/H.sub.2 O.sub.2 Mixtures. Japanese J. Appl. Physics vol. 31 (1992) pp. L1514-L1517 Part 2. No. IIA, Nov. 1992.

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