Method for reducing metal contamination of silicon wafers during

Details Method for reducing metal contamination of silicon wafers during Method for reducing metal contamination of silicon wafers during

1994-06-27

1997-06-10

Kastler, Scott

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 134 26, 25218628, C03C 2300

Patent

active

056371519

ABSTRACT:
A complex building agent, such as EDTA is added in a predetermined concentration to the "SC 1" step of a "PIRANHA-RCA" cleaning sequence for reducing the metal contamination left on the surface of a silicon wafer after completion of this cleaning step.

REFERENCES:
patent: 4116714 (1978-09-01), Basi
patent: 4264374 (1981-04-01), Beyer et al.
patent: 4885106 (1989-12-01), Lapham et al.
patent: 4913823 (1990-04-01), Lipinski et al.
patent: 4963283 (1990-10-01), Lapham et al.
patent: 4985228 (1991-01-01), Kirskey
patent: 5051134 (1991-09-01), Schnegg et al.
patent: 5213622 (1993-05-01), Bohling et al.
patent: 5290361 (1994-03-01), Hayashida et al.

Affiliated with

Also associated with

Rating

Method for reducing metal contamination of silicon wafers during does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for reducing metal contamination of silicon wafers during, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing metal contamination of silicon wafers during will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-761949