Method for reducing leakage currents in semiconductor devices

Details Method for reducing leakage currents in semiconductor devices Method for reducing leakage currents in semiconductor devices

1984-07-24

1985-11-05

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

29584, 427 82, 204164, 357 52, H01L 21326

Patent

active

045513538

ABSTRACT:
A method for reducing leakage currents in passivated semiconductor devices includes subjecting the passivation layer to a corona discharge for reducing or eliminating the inversion layer produced by the characteristic passivation layer charge.

REFERENCES:
patent: 2221338 (1940-11-01), Wintermute
patent: 3879183 (1975-04-01), Carlson
patent: 3895127 (1975-07-01), Comizzoli
patent: 4007294 (1977-02-01), Woods
Kerr, "Effect of Temperature and Bias on Glass-Silicon Interfaces, IBM Journal, Sep. 1964, pp. 385-393.
Summers et al., "Control of Silicon-Glass Interface Potential", IBM TDB, vol. 8, No. 7, Dec. 1965, p. 1012.
Kerr, "A Review of Instability Mechanisms in Passivation Films", Conference: 8th Annual Reliability Physics Symposium, Las Vegas, Nev., Apr. 7-10, 1970.

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