Method for reducing leakage current of a memory and related...

Details Method for reducing leakage current of a memory and related... Method for reducing leakage current of a memory and related...

2011-01-25

2011-01-25

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Disturbance control

C365S230060, C365S226000

Reexamination Certificate

active

07876612

ABSTRACT:
A method for reducing leakage current of a memory device includes supplying a first voltage to a main wordline driver, supplying a second voltage greater than the first voltage to a local wordline driver, and employing a transistor in the local wordline driver with a threshold voltage greater than a specific value.

REFERENCES:
patent: 5784331 (1998-07-01), Lysinger
patent: 5896344 (1999-04-01), Kirsch et al.
patent: 6603702 (2003-08-01), Kojima
patent: 7646653 (2010-01-01), Choi et al.
patent: 2004/0080358 (2004-04-01), Kushnarenko

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