Method for reducing free surface roughness of a...

Details Method for reducing free surface roughness of a... Method for reducing free surface roughness of a...

2005-11-08

2005-11-08

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Gettering of substrate

C438S715000, C438S799000

Reexamination Certificate

active

06962858

ABSTRACT:
The invention provides a method of reducing the roughness of the free surface of a wafer of semiconductor material by applying a rapid thermal annealing process under a pure argon atmosphere for a time sufficient to uniformly heat and smooth the free surface of the wafer.

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