Method for reducing foreign material concentrations in etch...

Details Method for reducing foreign material concentrations in etch... Method for reducing foreign material concentrations in etch...

2007-03-20

2007-03-20

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C134S001100

Reexamination Certificate

active

10604367

ABSTRACT:
A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that reaction products from the work piece having one or more elements form a first layer of reaction products that partially adhere to the inner chamber walls. A species is introduced into the etch chamber that increases the adhesion of the first layer of reaction products to the inner chamber walls.

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