Method for reducing facet reflectivities of semiconductor light

Details Method for reducing facet reflectivities of semiconductor light Method for reducing facet reflectivities of semiconductor light

1989-06-16

1989-10-03

Sikes, William L.

Coherent light generators

Particular resonant cavity

Specified cavity component

372 46, 372108, H01S 308

Patent

active

048721808

ABSTRACT:
A novel method for reducing the facet reflectivities of semiconductor light sources and amplifiers concerns the use of a bulk (non-waveguiding) index-matched regrown end cap region at both of the major facet surfaces of the amplifier. The amplifier has a tilted stripe geometry which, in combination with the end cap regions, enable the amplifier to reproducibly achieve facet reflectivities of less than 10.sup.-5 while avoiding a facet coating step. The improved optical amplifier is more amenable to mass production and less sensitive to both wavelength and polarization.

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