Semiconductor device manufacturing: process – Forming schottky junction
Reexamination Certificate
2008-11-07
2009-12-29
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Forming schottky junction
C438S571000, C438S573000, C257SE21608
Reexamination Certificate
active
07638415
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well (240) within a substrate (210) and forming a suppression implant (420) within the substrate (210). The method for manufacturing the zener diode may further include forming a cathode (620) and an anode (520) within the substrate (210), wherein the suppression implant (420) is located proximate the doped well (240) and configured to reduce threading dislocations.
REFERENCES:
patent: 4013483 (1977-03-01), Nuzillat et al.
patent: 4395723 (1983-07-01), Harari et al.
patent: 4737469 (1988-04-01), Stevens
patent: 4929568 (1990-05-01), Beesom et al.
patent: 5296727 (1994-03-01), Kawai et al.
patent: 5500546 (1996-03-01), Marum et al.
patent: 6130144 (2000-10-01), Verret
patent: 6218222 (2001-04-01), Brown et al.
patent: 2004/0217425 (2004-11-01), Brodsky et al.
patent: 2004/0262696 (2004-12-01), Ronsisvalle
patent: 2005/0006720 (2005-01-01), Ejiri et al.
patent: 2005/0253216 (2005-11-01), Tsuchiko
patent: 2007/0145520 (2007-06-01), Soma et al.
patent: 2007/0281433 (2007-12-01), Mollat et al.
Chatterjee Tathagata
Edwards Henry L.
Hu Binghua
Irwin Richard B.
Mollat Martin
Brady III Wade J.
Lindsay, Jr. Walter L
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Method for reducing dislocation threading using a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for reducing dislocation threading using a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing dislocation threading using a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4149619