Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2006-06-05
2008-12-16
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257SE21608, C257S260000, C257S360000
Reexamination Certificate
active
07466009
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the doped well and configured to reduce threading dislocations.
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Chatterjee Tathagata
Edwards Henry L.
Hu Binghua
Irwin Richard B.
Mollat Martin
Brady Wade J.
Lindsay, Jr. Walter L
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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