Method for reducing dislocation threading using a...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure

Reexamination Certificate

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Details

Other Related Categories

C257SE21608, C257S260000, C257S360000

Type

Reexamination Certificate

Status

active

Patent number

07466009

Description

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the doped well and configured to reduce threading dislocations.

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