Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-05-13
2008-05-13
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C365S173000, C360S324200
Reexamination Certificate
active
10963579
ABSTRACT:
A method and apparatus are disclosed for inhibiting diffusion of mobile atoms from an antiferromagnetic layer toward a tunnel oxide layer and through a ferromagnetic layer which is pinned by the antiferromagnetic layer. Diffusion of the mobile atoms is inhibited by an oxide layer provided between the anti-ferromagnetic layer and the ferromagnetic layer. Alternatively, the ferromagnetic layer can have boron atoms located on or in the layer to fill interstices.
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Drewes Joel A.
Gafron Terry
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