Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-10-30
2007-10-30
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S072000, C438S636000
Reexamination Certificate
active
11009687
ABSTRACT:
The method prevents oxidation or contamination phenomena of conductive interconnection structures in semiconductor devices and includes providing a layer of semiconductor or oxide base, a conductive layer or stack on the base layer, and an antireflection coating (ARC) layer on the conductive layer or stack. The method provides a thin dielectric covering layer on the antireflection coating layer to fill or cover the microfissures existing in the antireflection coating layer.
REFERENCES:
patent: 6093973 (2000-07-01), Ngo et al.
patent: 6345399 (2002-02-01), Jamison et al.
patent: 7105279 (2006-09-01), Vogt et al.
Alba Simone
Spandre Alessandro
Zanderighi Barbara
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Picardat Kevin M.
STMicroelectronics S.r.l.
LandOfFree
Method for reducing defects after a metal etching in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for reducing defects after a metal etching in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing defects after a metal etching in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3872965