Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Reexamination Certificate
2007-02-13
2007-02-13
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
C117S001000, C117S068000, C117S069000, C117S070000
Reexamination Certificate
active
10455007
ABSTRACT:
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
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Anthony Thomas Richard
Arthur Stephen Daley
D'Evelyn Mark Philip
Levinson Lionel Monty
Lucek John William
Diamond Innovations, Inc.
Kunemund Robert
Pepper Hamilton LLP
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