Method for reducing critical dimension attainable via the...

Details Method for reducing critical dimension attainable via the... Method for reducing critical dimension attainable via the...

2005-03-08

2005-03-08

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S046000

Reexamination Certificate

active

06864184

ABSTRACT:
In one embodiment, a semiconductor device processing method, comprising the steps of: (a) using a patterned photoresist to form a structure having at least one edge; (b) prior to removal of the photoresist, forming a conforming layer from an organic compound and patterning the conforming layer to form at least one sidewall spacer which are self-aligned to the at least one edge; (c) performing a processing operation which is at least partially localized by the at least one sidewall spacer; and (d) removing the at least one sidewall spacer and the photoresist, wherein the conforming layer is formed via deposition of at least one organic compound selected from C1to C8alkanes C2to C8alkenes, C3to C8cyclo-alkenes, C4to C8cyclo-alkenes, C1to C8fluoro-alkanes, C2to C8fluoro-alkenes, C3to C8cyclofluoro-alkanes, C4to C8cyclofluoro-alkenes, or mixtures thereof.

REFERENCES:
patent: 4163828 (1979-08-01), Mahoney
patent: 4871630 (1989-10-01), Giammarco et al.
patent: 5064748 (1991-11-01), Bobbio
patent: 5217749 (1993-06-01), Denton et al.
patent: 6228747 (2001-05-01), Joyner
patent: 6475811 (2002-11-01), Babcock
patent: 6548401 (2003-04-01), Trivedi
patent: 6750150 (2004-06-01), Chung et al.
patent: 20030087526 (2003-05-01), Huang et al.
patent: 20030219988 (2003-11-01), Shan et al.

Affiliated with

Also associated with

Rating

Method for reducing critical dimension attainable via the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for reducing critical dimension attainable via the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing critical dimension attainable via the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3444429