Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-04-06
1997-08-05
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 2, 117928, C30B 2516
Patent
active
056538014
ABSTRACT:
Contamination of aluminum-containing compound semiconductors is greatly reduced by an improved method for manufacturing the semiconductors, wherein the growing semiconductor crystal is doped with a predetermined concentration of selenium. The method of the present invention can be used to reduce contaminants in both p-type and n-type semiconductors.
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Chen Jyh-Chia
Huang Zhenchun
Garrett Felisa
University of Maryland Baltimore County
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