Method for reducing contact resistance of a semiconductor...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S724000, C438S745000

Reexamination Certificate

active

07026250

ABSTRACT:
A method for fabricating a semiconductor device wherein the lower portion of a contact hole is cleaned, and doped with an impurity for reducing contact resistance is disclosed. The method comprises: sequentially forming a buffer layer and an interlayer insulating film on a semiconductor substrate; etching the interlayer insulating film and the buffer layer to form a contact hole exposing the semiconductor substrate; performing a cleaning process of a lower portion of the contact hole; doping an impurity into the surface of the semiconductor substrate exposed by the contact hole; and forming a conductive layer filling the contact hole on the entire surface of the resulting structure.

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patent: 99-0006146 (1999-01-01), None

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