Method for reducing capacitance and improving high frequency...

Details Method for reducing capacitance and improving high frequency... Method for reducing capacitance and improving high frequency...

2011-03-08

2011-03-08

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S046015, C372S050124

Reexamination Certificate

active

07903712

ABSTRACT:
A VCSEL structure is provided. The VCSEL structure comprises a substrate consisting of a III-V material. The structure may also include one or more conducting layers positioned on said substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

REFERENCES:
patent: 2001/0017876 (2001-08-01), Kner et al.
patent: 2002/0131458 (2002-09-01), Sirbu et al.
patent: 2003/0039284 (2003-02-01), Zheng
patent: 2004/0101009 (2004-05-01), Johnson et al.

Affiliated with

Also associated with

Rating

Method for reducing capacitance and improving high frequency... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for reducing capacitance and improving high frequency..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing capacitance and improving high frequency... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2665984