Method for reducing base resistance in epitaxial-based bipolar t

Details Method for reducing base resistance in epitaxial-based bipolar t Method for reducing base resistance in epitaxial-based bipolar t

1994-02-28

1995-07-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 99, 437247, 437909, 148DIG11, H01L 21331

Patent

active

054361800

ABSTRACT:
One preferred method for making a semiconductor structure includes altering the direction, and optionally the position, of a polycrystalline grain boundary (38) in a base layer (17,21) of an epitaxial base bipolar transistor (10). Altering the grain boundary (38) may be accomplished by annealing the semiconductor structure after the layer, which later forms the lower portion of the base (17), has been deposited. Altering the grain boundary (38) has a significant effect in reducing base resistance (R.sub.bx1, R.sub.bx2). Reduced base resistance (R.sub.bx1, R.sub.bx2) dramatically improves device performance.

REFERENCES:
patent: 4504332 (1985-03-01), Shinada
patent: 4879255 (1989-11-01), Deguchi et al.
patent: 4914053 (1990-04-01), Matyi et al.

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