Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-02-11
2010-12-14
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S689000, C438S443000, C257SE21230, C257SE21304
Reexamination Certificate
active
07851362
ABSTRACT:
In order to reduce an unevenness of a surface of a body, a sacrificial layer is applied to the surface, a chemical-mechanical polishing of the sacrificial layer and material of said body is performed to reduce the unevenness of the surface, and a remainder of the sacrificial layer, if any, may be removed.
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Plagmann Joern
Poehle Holger
Ghyka Alexander G
Infineon - Technologies AG
Mustapha Abdulfattah
Slater & Matsil L.L.P.
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