Method for reducing an overlay error and measurement mark...

Details Method for reducing an overlay error and measurement mark... Method for reducing an overlay error and measurement mark...

2004-09-30

2008-09-16

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

C430S030000, C430S296000, C430S942000

Reexamination Certificate

active

07425396

ABSTRACT:
A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

REFERENCES:
patent: 5701013 (1997-12-01), Hsia et al.
patent: 5757507 (1998-05-01), Ausschnitt et al.
patent: 6462818 (2002-10-01), Bareket
patent: 2001/0055720 (2001-12-01), Sato et al.
patent: 2002/0182516 (2002-12-01), Bowes

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