Method for reduced N+ diffusion in strained Si on SiGe...

Details Method for reduced N+ diffusion in strained Si on SiGe... Method for reduced N+ diffusion in strained Si on SiGe...

2005-02-15

2008-03-18

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S274000, C257SE27062, C257SE27108

Reexamination Certificate

active

07345329

ABSTRACT:
The first source and drain regions are formed in an upper surface of a SiGe substrate. The first source and drain regions containing an N type impurity. Vacancy concentration in the first source and drain regions are reduced in order to reduce diffusion of the N type impurity contained in the first source and drain regions. The vacancy concentration is reduced by an interstitial element or a vacancy-trapping element in the first source and drain regions. The interstitial element or the vacancy-trapping element is provided by ion-implantation.

REFERENCES:
patent: 3602841 (1971-08-01), McGroddy
patent: 4665415 (1987-05-01), Esaki et al.
patent: 4853076 (1989-08-01), Tsaur et al.
patent: 4855245 (1989-08-01), Neppl et al.
patent: 4952524 (1990-08-01), Lee et al.
patent: 4958213 (1990-09-01), Eklund et al.
patent: 5006913 (1991-04-01), Sugahara et al.
patent: 5060030 (1991-10-01), Hoke
patent: 5081513 (1992-01-01), Jackson et al.
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5134085 (1992-07-01), Gilgen et al.
patent: 5310446 (1994-05-01), Konishi et al.
patent: 5354695 (1994-10-01), Leedy
patent: 5371399 (1994-12-01), Burroughes et al.
patent: 5391510 (1995-02-01), Hsu et al.
patent: 5459346 (1995-10-01), Asakawa et al.
patent: 5471948 (1995-12-01), Burroughes et al.
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5561302 (1996-10-01), Candelaria
patent: 5565697 (1996-10-01), Asakawa et al.
patent: 5571741 (1996-11-01), Leedy
patent: 5592007 (1997-01-01), Leedy
patent: 5592018 (1997-01-01), Leedy
patent: 5670798 (1997-09-01), Schetzina
patent: 5679965 (1997-10-01), Schetzina
patent: 5683934 (1997-11-01), Candelaria
patent: 5840593 (1998-11-01), Leedy
patent: 5861651 (1999-01-01), Brasen et al.
patent: 5880040 (1999-03-01), Sun et al.
patent: 5940736 (1999-08-01), Brady et al.
patent: 5946559 (1999-08-01), Leedy
patent: 5960297 (1999-09-01), Saki
patent: 5972783 (1999-10-01), Arai et al.
patent: 5989978 (1999-11-01), Peidous
patent: 6008126 (1999-12-01), Leedy
patent: 6025280 (2000-02-01), Brady et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6066545 (2000-05-01), Doshi et al.
patent: 6090684 (2000-07-01), Ishitsuka et al.
patent: 6107143 (2000-08-01), Park et al.
patent: 6117722 (2000-09-01), Wuu et al.
patent: 6133071 (2000-10-01), Nagai
patent: 6165383 (2000-12-01), Chou
patent: 6221735 (2001-04-01), Manley et al.
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6246095 (2001-06-01), Brady et al.
patent: 6255169 (2001-07-01), Li et al.
patent: 6261964 (2001-07-01), Wu et al.
patent: 6265317 (2001-07-01), Chiu et al.
patent: 6274444 (2001-08-01), Wang
patent: 6281532 (2001-08-01), Doyle et al.
patent: 6284623 (2001-09-01), Zhang et al.
patent: 6284626 (2001-09-01), Kim
patent: 6319794 (2001-11-01), Akatsu et al.
patent: 6361885 (2002-03-01), Chou
patent: 6362082 (2002-03-01), Doyle et al.
patent: 6368931 (2002-04-01), Kuhn et al.
patent: 6372590 (2002-04-01), Nayak et al.
patent: 6403486 (2002-06-01), Lou
patent: 6403975 (2002-06-01), Brunner et al.
patent: 6406973 (2002-06-01), Lee
patent: 6461936 (2002-10-01), von Ehrenwall
patent: 6476462 (2002-11-01), Shimizu et al.
patent: 6483171 (2002-11-01), Forbes et al.
patent: 6493497 (2002-12-01), Ramdani et al.
patent: 6498358 (2002-12-01), Lach et al.
patent: 6501121 (2002-12-01), Yu et al.
patent: 6506652 (2003-01-01), Jan et al.
patent: 6509618 (2003-01-01), Jan et al.
patent: 6521964 (2003-02-01), Jan et al.
patent: 6531369 (2003-03-01), Ozkan et al.
patent: 6531740 (2003-03-01), Bosco et al.
patent: 6621392 (2003-09-01), Volant et al.
patent: 6635506 (2003-10-01), Volant et al.
patent: 6689671 (2004-02-01), Yu et al.
patent: 6717216 (2004-04-01), Doris et al.
patent: 6825529 (2004-11-01), Chidambarrao et al.
patent: 6831292 (2004-12-01), Currie et al.
patent: 6974981 (2005-12-01), Chidambarrao et al.
patent: 6977194 (2005-12-01), Belyansky et al.
patent: 7015082 (2006-03-01), Doris et al.
patent: 2001/0009784 (2001-07-01), Ma et al.
patent: 2002/0047125 (2002-04-01), Fukuda et al.
patent: 2002/0063292 (2002-05-01), Armstrong et al.
patent: 2002/0074598 (2002-06-01), Doyle et al.
patent: 2002/0086472 (2002-07-01), Roberds et al.
patent: 2002/0086497 (2002-07-01), Kwok
patent: 2002/0090791 (2002-07-01), Doyle et al.
patent: 2003/0032261 (2003-02-01), Yeh et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2003/0057184 (2003-03-01), Yu et al.
patent: 2003/0067035 (2003-04-01), Tews et al.
patent: 2003/0227061 (2003-12-01), Yokoagawa et al.
patent: 2004/0140481 (2004-07-01), Jagannathan et al.
patent: 2004/0238914 (2004-12-01), Deshpande et al.
patent: 2004/0262784 (2004-12-01), Doris et al.
patent: 2005/0040460 (2005-02-01), Chidambarrao et al.
patent: 2005/0082634 (2005-04-01), Doris et al.
patent: 2005/0093030 (2005-05-01), Doris et al.
patent: 2005/0098829 (2005-05-01), Doris et al.
patent: 2005/0106799 (2005-05-01), Doris et al.
patent: 2005/0145954 (2005-07-01), Zhu et al.
patent: 2005/0148146 (2005-07-01), Doris et al.
patent: 2005/0194699 (2005-09-01), Belyansky et al.
patent: 2005/0236668 (2005-10-01), Zhu et al.
patent: 2005/0245017 (2005-11-01), Belyansky et al.
patent: 2005/0280051 (2005-12-01), Chidambarrao et al.
patent: 2005/0282325 (2005-12-01), Belyansky et al.
patent: 2006/0027868 (2006-02-01), Doris et al.
patent: 2006/0057787 (2006-03-01), Doris et al.
patent: 2006/0060925 (2006-03-01), Doris et al.
patent: 64-76755 (1989-03-01), None
Kern Rim, et al., “Transconductance Enhancement in Deep Submicron Strained-Sin-MOSFETs”, International Electron Devices Meeting, 26, 8, 1, IEEE, Sep. 1998.
Kern Rim, et al., “Characteristics and Device Design of Sub-100 nm Strained Si N− and PMOSFETs”, 2002 Symposium On VLSI Technology Digest of Technical Papers, IEEE, pp. 98-99.
Gregory Scott, et al., “NMOS Drive Current Reduction Caused by Transistor Layout and Trench Islation Induced Stress”, International Electron Devices Meeting, 34.4.1, IEEE, Sep. 1999.
F. Ootsuka, et al., “A Highly Dense, High-Performance 130nm node CMOS Technology for Large Scale System-on-a-Chip Application”, International Electron Devices Meeting, 23.5.1, IEEE, Apr. 2000.
Shinya Ito, et al., “Mechanical Stress Effect of Etch-Stop Nitride and its Impact on Deep Submicron Transistor Design”, International Electron Devices Meeting, 10.7.1, IEEE, Apr. 2000.
A. Shimizu, et al., “Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement”, International Electron Devices Meeting, IEEE, Mar. 2001.
K. Ota, et al., “Novel Locally Strained Channel Technique for high Performance 55nm CMOS”, International Electron Devices Meeting, 2.2.1, IEEE, Feb. 2002.
G. Zhang, et al., “A New ‘Mixed-Mode’ Reliability Degradation Mechanism in Advanced Si and SiGe Bipolar Transistors.” IEEE Transactions on Electron Devices, vol. 49, No. 12, Dec. 2002, pp. 2151-2156.
H.S. Momose, et al., “Temperature Dependence of Emitter-Base Reverse Stress Degradation and its Mechanism Analyzed by MOS Structures.” 1989 IEEE, Paper 6.2, pp. 140-143.
C.J. Huang, et al., “Temperature Dependence and Post-Stress Recovery of Hot Electron Degradation Effects in Bipolar Transistors,” IEEE 1991, Bipolar Circuits and Technology Meeting 7.5, pp. 170-173.
S.R. Sheng, et al., “Degradation and Recovery of SiGe HBTs Following Radiation and Hot-Carrier Stressing.” pp. 14-15.
Z. Yang, et al., “Avalanche Current Induced Hot Carrier Degradation in 200 GHz SiGe Heterojunction Bipolar Transistors.” pp. 1-5.
H. Li, et al., “Design of W-Band VCOs with High Output Power for Potential Application in 77 GHz Automotive Radar Systems.” 2003, IEEE GaAs Digest, pp. 263-266.
H. Wurzer, et al., “Annealing of Degraded non-Transistors-Mechanisms and Modeling.” IEEE Transactions on Electron Devices, vol. 41, No. 4, Apr. 1994, pp. 533-538.
B. Doyle, et al., “Recovery of Hot-Carrier Damage in Reoxidized Nitrided Oxide MOSFETs.” IEEE Electron Device Le

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