Method for recycling of ion implantation monitor wafers

Details Method for recycling of ion implantation monitor wafers Method for recycling of ion implantation monitor wafers

2008-01-31

2010-06-08

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S058000, C438S143000, C257SE21214, C257SE21380, C257SE21237

Reexamination Certificate

active

07732303

ABSTRACT:
A method of recycling monitor wafers. The method includes: (a) providing a semiconductor wafer which includes a dopant layer extending from a top surface of the wafer into the wafer a distance less than a thickness of the wafer, the dopant layer containing dopant species; after (a), (b) attaching an adhesive tape to a bottom surface of the wafer; after (b), (c) removing the dopant layer; and after (c), (d) removing the adhesive tape.

REFERENCES:
patent: 5759909 (1998-06-01), Goebel et al.
patent: 6568794 (2003-05-01), Yamanaka et al.
patent: 6752694 (2004-06-01), Schneegans et al.
patent: 6917433 (2005-07-01), Levy et al.
patent: 7037854 (2006-05-01), Bachrach et al.
patent: 2007/0063217 (2007-03-01), Brogan et al.
patent: 2008/0185715 (2008-08-01), Kroninger et al.
patent: 9237771 (1997-09-01), None

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