Method for recrystallization of preamorphized semiconductor surf

Details Method for recrystallization of preamorphized semiconductor surf Method for recrystallization of preamorphized semiconductor surf

1991-09-24

1993-10-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 25, 437 27, 437 31, 437 82, 437247, 437950, H01L 21265

Patent

active

052544842

ABSTRACT:
A method for thermal annealing of amorphous surface layers on a single-crystal semiconductor base element. The amorphous surface layer is obtained by implantation of germanium or silicon ions in a single-crystal silicon base element. Finally, the amorphous layer is doped by implantation of impurities and subjected to a three-step annealing process. During the first step of this process, the interface region between the amorphous layer and the single-crystal base element is smoothed at a temperature between 400.degree. and 460.degree. C., in the second step the amorphous layer recrystallizes at a temperature between 500.degree. and 600.degree. C., and in the third step the dopants are activated in an RTA process.

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Furukawa, S.: "Layered Structures and Interface . . . " D. Reidel Publishing Company/Dordrecht, Boston, London, 1984.

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