Method for recovering sublimable material

Details Method for recovering sublimable material Method for recovering sublimable material

1998-04-06

2000-06-27

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117109, 117915, C30B 2300

Patent

active

060802405

ABSTRACT:
Crystal of sublimable material is recovered by introducing a reaction gas containing sublimable material into a vertical recovery chamber kept at a temperature near a depositing temperature of the sublimable material to form a crystal deposit of the sublimable material on a surface of a wall of the chamber, and cooling the wall formed with the crystal deposit to a temperature below the previous temperature to cause a contraction difference between the crystal deposit and the wall formed with the crystal deposit, and break away the deposited crystal from the wall.

REFERENCES:
patent: 4252545 (1981-02-01), Haferkorn
patent: 5180463 (1993-01-01), Le Moigne et al.
patent: 5180571 (1993-01-01), Hosoya et al.
patent: 5264071 (1993-11-01), Anthony et al.
patent: 5443654 (1995-08-01), Hiltunen et al.
Patent Abstracts of Japan, vol. 097, No. 001, Jan. 31, 1997, JP 08 243 301, Sep. 24, 1996.
Patent Abstracts of Japan, vol. 016, No. 425 (C-0982), Sep. 7, 1992, JP 04 145 991, May 19, 1992.

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